19 February 2018 Next generation diode lasers with enhanced brightness
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Proceedings Volume 10514, High-Power Diode Laser Technology XVI; 105140G (2018) https://doi.org/10.1117/12.2289464
Event: SPIE LASE, 2018, San Francisco, California, United States
High-power diode lasers are nowadays well established manufacturing tools in high power materials processing, mainly for tactile welding, surface treatment and cladding applications. Typical beam parameter products (BPP) of such lasers range from 30 to 50 mm·mrad at several kilowatts of output power. TRUMPF offers a product line of diode lasers to its customers ranging from 150 W up to 6 kW of output power. These diode lasers combine high reliability with small footprint and high efficiency. However, up to now these lasers are limited in brightness due to the commonly used spatial and coarse spectral beam combining techniques. Recently diode lasers with enhanced brightness have been presented by use of dense wavelength multiplexing (DWM). In this paper we report on TRUMPF’s diode lasers utilizing DWM. We demonstrate a 2 kW and a 4 kW system ideally suited for fine welding and scanner welding applications. The typical laser efficiency is in the range of 50%. The system offers plug and play exchange of the fiber beam delivery cable, multiple optical outputs and integrated cooling in a very compact package. An advanced control system offers flexible integration in any customer’s shop floor environment and includes industry 4.0 capabilities (e.g. condition monitoring and predictive maintenance).
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Ried, S. Ried, S. Rauch, S. Rauch, L. Irmler, L. Irmler, J. Rikels, J. Rikels, A. Killi, A. Killi, E. Papastathopoulos, E. Papastathopoulos, E. Sarailou, E. Sarailou, H. Zimer, H. Zimer, } "Next generation diode lasers with enhanced brightness", Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 105140G (19 February 2018); doi: 10.1117/12.2289464; https://doi.org/10.1117/12.2289464


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