19 February 2018 Improvements to tapered semiconductor MOPA laser design and testing
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Proceedings Volume 10514, High-Power Diode Laser Technology XVI; 105140U (2018) https://doi.org/10.1117/12.2289933
Event: SPIE LASE, 2018, San Francisco, California, United States
Abstract
This paper expands on previous work in the field of high power tapered semiconductor amplifiers and integrated master oscillator power amplifier (MOPA) devices. The devices are designed for watt-class power output and single-mode operation for free-space optical communication. This paper reports on improvements to the fabrication of these devices resulting in doubled electrical-to-optical efficiency, improved thermal properties, and improved spectral properties. A newly manufactured device yielded a peak power output of 375 mW continuous-wave (CW) at 3000 mA of current to the power amplifier and 300 mA of current to the master oscillator. This device had a peak power conversion efficiency of 11.6% at 15° C, compared to the previous device, which yielded a peak power conversion efficiency of only 5.0% at 15° C. The new device also exhibited excellent thermal and spectral properties, with minimal redshift up to 3 A CW on the power amplifier. The new device shows great improvement upon the excessive self-heating and resultant redshift of the previous device. Such spectral improvements are desirable for free-space optical communications, as variation in wavelength can degrade signal quality depending on the detectors being used and the medium of propagation.
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James A. Beil, Lisa Shimomoto, Rebecca B. Swertfeger, Stephen M. Misak, Jenna Campbell, Jeremy Thomas, Daniel Renner, Milan Mashanovitch, Paul O. Leisher, Richard W. Liptak, "Improvements to tapered semiconductor MOPA laser design and testing", Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 105140U (19 February 2018); doi: 10.1117/12.2289933; https://doi.org/10.1117/12.2289933
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