19 February 2018 Wavelength stabilized DBR high power diode laser using EBL optical confining grating technology
Author Affiliations +
Proceedings Volume 10514, High-Power Diode Laser Technology XVI; 105140V (2018) https://doi.org/10.1117/12.2290287
Event: SPIE LASE, 2018, San Francisco, California, United States
This paper reports a DBR High Power Diode Laser (DBR-HPDL) realization, emitting up to 10W in the 920 nm range. High spectral purity (90% power in about 0.5 nm), and wavelength stability versus injected current (about 5 times more than standard FP laser) candidates DBR-HPDL as a suitable device for wavelength stabilized pump source, and high brightness applications exploiting Wavelength Division Multiplexing. Key design aspect is a multiple-orders Electron Beam Lithography (EBL) optical confining grating, stabilizing on same wafer multiple wavelengths by a manufacturable and reliable technology. Present paper shows preliminary demonstration of wafer with 3 pitches, generating DBRHPDLs 2.5 nm spaced.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Paoletti, R. Paoletti, S. Codato, S. Codato, C. Coriasso, C. Coriasso, P. Gotta, P. Gotta, G. Meneghini, G. Meneghini, G. Morello, G. Morello, P. De Melchiorre, P. De Melchiorre, E. Riva, E. Riva, M. Rosso, M. Rosso, A. Stano, A. Stano, M. Gattiglio, M. Gattiglio, } "Wavelength stabilized DBR high power diode laser using EBL optical confining grating technology", Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 105140V (19 February 2018); doi: 10.1117/12.2290287; https://doi.org/10.1117/12.2290287


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