19 February 2018 High-power and brightness laser diode modules using new DBR chips
Author Affiliations +
Proceedings Volume 10514, High-Power Diode Laser Technology XVI; 105140W (2018) https://doi.org/10.1117/12.2290505
Event: SPIE LASE, 2018, San Francisco, California, United States
The paper reports on the design, manufacturing and preliminary characterization of a new family of compact and high beam quality multi-emitter laser diode modules capable of delivering up to over 400W in a 135/0.15 fiber. The layout exploits a proprietary architecture and is based on innovative narrow linewidth high-power DBR chips, properly combined through spatial, polarization and wavelength multiplexing. The intrinsic wavelength-stabilization of these DBR chips allows the use of the developed modules not only for direct-diode material processing but also in pump sources for ytterbium-doped fiber lasers without the need of external stabilization devices.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hao Yu, Martina Riva, Giammarco Rossi, Andrea Braglia, Guido Perrone, "High-power and brightness laser diode modules using new DBR chips", Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 105140W (19 February 2018); doi: 10.1117/12.2290505; https://doi.org/10.1117/12.2290505


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