19 February 2018 High-power and brightness laser diode modules using new DBR chips
Author Affiliations +
Proceedings Volume 10514, High-Power Diode Laser Technology XVI; 105140W (2018) https://doi.org/10.1117/12.2290505
Event: SPIE LASE, 2018, San Francisco, California, United States
The paper reports on the design, manufacturing and preliminary characterization of a new family of compact and high beam quality multi-emitter laser diode modules capable of delivering up to over 400W in a 135/0.15 fiber. The layout exploits a proprietary architecture and is based on innovative narrow linewidth high-power DBR chips, properly combined through spatial, polarization and wavelength multiplexing. The intrinsic wavelength-stabilization of these DBR chips allows the use of the developed modules not only for direct-diode material processing but also in pump sources for ytterbium-doped fiber lasers without the need of external stabilization devices.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hao Yu, Hao Yu, Martina Riva, Martina Riva, Giammarco Rossi, Giammarco Rossi, Andrea Braglia, Andrea Braglia, Guido Perrone, Guido Perrone, } "High-power and brightness laser diode modules using new DBR chips", Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 105140W (19 February 2018); doi: 10.1117/12.2290505; https://doi.org/10.1117/12.2290505


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