Presentation + Paper
19 February 2018 Distributed Bragg reflector tapered diode lasers emitting more than 10 W at 1154 nm
D. Feise, F. Bugge, M. Matalla, A. Thies, P. Ressel, G. Blume, J. Hofmann, K. Paschke
Author Affiliations +
Proceedings Volume 10514, High-Power Diode Laser Technology XVI; 105140X (2018) https://doi.org/10.1117/12.2290658
Event: SPIE LASE, 2018, San Francisco, California, United States
Abstract
Distributed Bragg reflector tapered diode lasers (DBR-TPL) emitting at 1154 nm are ideal light sources to be implemented into medical devices and hand-held tools for treatment in dermatology and ophthalmology at 577 nm due to their high spectral radiance enabling second harmonic generation from near infrared to yellow.

In this work, we present DBR-TPLs which are able to emit more than 10 W in continuous-wave operation with a narrow spectral emission at 1154 nm and a very good beam quality providing excellent spectral radiance. The investigated DBRTPLs are based on three different epitaxial structures with varying vertical far field angles of 35°, 26°, and 17°. To optimize the coupling efficiency into non-linear crystals we studied DBR-TPL with a vertical far field angle of approx. 17° based on an asymmetrical super large optical cavity epitaxial structure. At a pump current of 18 A these devices are able to emit more than 9 W at 25°C and nearly 11 W at 10°C. The spectral emission is very narrow (ΔλFWHM = 18 pm) and single mode over the entire current range. While the beam quality factor M2 according to the 1/e2-level remains 1.1, the M2 according to second order moments deteriorates when the laser is pumped with higher currents. Therefore, the power content in the central lobe increases somewhat less rapidly than the total power.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Feise, F. Bugge, M. Matalla, A. Thies, P. Ressel, G. Blume, J. Hofmann, and K. Paschke "Distributed Bragg reflector tapered diode lasers emitting more than 10 W at 1154 nm", Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 105140X (19 February 2018); https://doi.org/10.1117/12.2290658
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Semiconductor lasers

Distributed Bragg reflectors

Second-harmonic generation

Light sources

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