15 February 2018 Large pulse-energy VECSELs
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Abstract
We report on the simulation of cavity-dumped semiconductor disk lasers utilizing an intracavity Pockels cell. This technique is used to generate high peak power pulses with pulse lengths of nominally one cavity round-trip. These results are compared to experiments demonstrated using InGaAs quantum-well gain region operating at approximately 1 μm to generate micro-Joule level nanosecond pulses.
Conference Presentation
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Robert Bedford, Robert Bedford, Ricky Gibson, Ricky Gibson, Joshua Myers, Joshua Myers, } "Large pulse-energy VECSELs", Proc. SPIE 10515, Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII, 105150C (15 February 2018); doi: 10.1117/12.2292191; https://doi.org/10.1117/12.2292191
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