15 February 2018 AlGaAs-based optically pumped semiconductor lasers
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The most technologically mature optically pumped semiconductor lasers (OPSL) are based on InGaAs quantum wells (QW) for emission in the 900-1200 nm range. The low wavelength boundary is set by both the bandgap of InGaAs and the most common pump wavelength of 808 nm. To extend the wavelength coverage into 700 – 900 nm, a different QW system and a different pump wavelength are needed. In this work, we present the progress and result in the development of AlGaAs-based OPSL.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yanbo Bai, Yanbo Bai, Zuntu Xu, Zuntu Xu, Yong Lin, Yong Lin, Jeffrey Wisdom, Jeffrey Wisdom, Christian Scholz, Christian Scholz, Eli Weiss, Eli Weiss, Juan Chilla, Juan Chilla, Andreas Diening, Andreas Diening, } "AlGaAs-based optically pumped semiconductor lasers", Proc. SPIE 10515, Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII, 105150E (15 February 2018); doi: 10.1117/12.2291082; https://doi.org/10.1117/12.2291082


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