15 February 2018 Concept of the CW GaN-based VECSEL
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Abstract
A concept and numerical study of a continuous-wave (CW) nitride-based vertical-external-cavity surface-emitting laser (VECSEL) with an InGaN/GaN active region is presented. The structure is designed to generate radiation around 450 nm. An array of nitride-based continuous-wave laser diodes is proposed to pump directly the quantum wells in the active region. We expect that it enables CW operation of the presented laser, in contrast to the GaN-based VECSELs demonstrated so far. Moreover, employing in-well pumping instead of barrier pumping reduces pump-laser quantum defect, which contributes to better thermal properties of the device. An external efficiency as high as 26% can be theoretically achieved by using a special multi-pass pump setup.
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Adam K. Sokół, Łukasz Piskorski, Maciej Kuc, Michał Wasiak, Robert P. Sarzała, "Concept of the CW GaN-based VECSEL", Proc. SPIE 10515, Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII, 105150X (15 February 2018); doi: 10.1117/12.2290391; https://doi.org/10.1117/12.2290391
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