For red emitting devices, around 637 nm an output power up to about 1 W is achieved, limited by the properties of the semiconductor material. Devices emitting in the longer wavelength range around 1000 nm reach output powers up to 15 W. For all the above manufactured diode lasers about 80% of the emitted laser light is within the diffraction limited central lobe. Here, e.g. 10 W diffraction limited power was measured.
The devices are successfully implemented into experiments for non-linear frequency conversion, e.g. SHG and the pumping of an OPO, as an excitation source for absorption spectroscopy, as pump source for fs-lasers, and their emission is efficiently coupled into single mode fibers.