19 February 2018 New laser slicing technology named KABRA process enables high speed and high efficiency SiC slicing
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Abstract
SiC is highly anticipated as the material to be used in the next generation of power devices. However, due to its high rigidity, it is difficult to process, has a low throughput in the wafer production process, and has a high cost. In order to solve these issues, we have developed the KABRA process – a new wafer-production process which uses laser processing technology – and have devised fully-automatic equipment called “KABRA!zen,” which enables the mass production of SiC wafers. KABRA!zen achieves approximately twice the throughput and one-third the material loss of the conventional processes.
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Kazuya Hirata, "New laser slicing technology named KABRA process enables high speed and high efficiency SiC slicing", Proc. SPIE 10520, Laser-based Micro- and Nanoprocessing XII, 1052003 (19 February 2018); doi: 10.1117/12.2291458; https://doi.org/10.1117/12.2291458
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