23 February 2018 Performance analysis of GeSn-alloy-based multiple quantum well transistor laser
Author Affiliations +
The Group IV Photonics (GFP) which include an alloy of Si, Ge & Sn that gives a direct bandgap material (GeSn, SiGeSn) in near and mid-IR region used as an active material in photonics devices. The multiple quantum well SiGeSn/GeSn transistor laser structure is considered in this paper and performance parameters are evaluated for the same. The result shows that the threshold base current density (2.6 kA/cm2) for the proposed device initially decreases with increasing number of quantum well (QW) and later on it saturates. The current gain and output photon density of the device decreases and increases respectively, with increasing number of QW.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ravi Ranjan, Ravi Ranjan, Prakash Pareek, Prakash Pareek, Syed Sadique Anwer Askari, Syed Sadique Anwer Askari, Mukul K. Das, Mukul K. Das, } "Performance analysis of GeSn-alloy-based multiple quantum well transistor laser", Proc. SPIE 10526, Physics and Simulation of Optoelectronic Devices XXVI, 105262A (23 February 2018); doi: 10.1117/12.2290570; https://doi.org/10.1117/12.2290570

Back to Top