22 February 2018 Characteristics-improvement of QD semiconductor optical amplifier using rapid-thermal annealing process
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Proceedings Volume 10528, Optical Components and Materials XV; 105280F (2018) https://doi.org/10.1117/12.2288608
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
We investigated the effect of Rapid Thermal Annealing (RTA) process on Quantum Dot Semiconductor Optical Amplifiers (QD SOAs). The devices are composed of 30-layer stacks of InAs quantum dot by using strain compensation method. The lateral size and height of QD are 30 nm and 4 nm, respectively. Our QD SOAs have emission wavelengths within 1.5 μm-band. We applied RTA process to improve the characteristics of internal quantum efficiency (ηi ) and optical loss (αi ) of ridge laser diode for QD SOAs. In this case, the operating temperatures of RTA process were set at 600°C, 620°C, 640°C and 660°C for 30 seconds each. In addition, the devices are cleaved to form a cavity length at 0.06 cm, 0.08 cm, 0.10 cm, 0.12 cm and 0.14 cm. According to the L-I characteristic result of ridge laser diode structure for QD SOAs at 640°C, the best minimum threshold current ( Ith ) is 47.93 mA. Moreover, according to the plot between 1 ηd−1 (external quantum efficiency) and cavity length, we can optimize the internal quantum efficiency and optical loss for a ridge laser diode structure to be 66.39% and 9.87 cm-1 respectively at 640°C RTA’s temperature. Finally, The RTA process helps to achieve 1.4 times higher in internal quantum efficiency as well as a minimal increase in internal optical loss comparing to without RTA.
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Budsara Boriboon, Duang-rudee Worasucheep, Atsushi Matsumoto, Kouichi Akahane, Naokatsu Yamamoto, Naoya Wada, "Characteristics-improvement of QD semiconductor optical amplifier using rapid-thermal annealing process", Proc. SPIE 10528, Optical Components and Materials XV, 105280F (22 February 2018); doi: 10.1117/12.2288608; https://doi.org/10.1117/12.2288608
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