PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
We present a photoconductive terahertz source that offers broadband pulsed terahertz radiation with enhanced optical-to-terahertz conversion efficiencies compared to photoconductive terahertz sources based on short-carrier-lifetime semiconductors. The performance enhancement is achieved by utilizing a plasmonic nanocavity that tightly confines optical pump photons inside a photoconductive layer near the terahertz radiating elements. The plasmonic nanocavity is implemented by sandwiching the photoconductive layer between a distributed Bragg reflector and plasmonic metallic structures, which are optimized to be resonant at the optical pump wavelength. The plasmonic structures are also designed as a broadband terahertz nanoantenna array. A thin undoped GaAs film is used as the photoconductive layer offering much higher carrier drift velocities compared to short-carrier-lifetime GaAs substrates. The tight confinement of the optical pump photons and the use of a low-defect photoconductive semiconductor layer allow drift of almost all of the photo-generated carriers to the terahertz nanoantennas in a sub-picosecond time scale to efficiently contribute to pulsed terahertz radiation. We experimentally demonstrate that the presented terahertz source offers 60 times higher optical-to-terahertz conversion efficiency compared to a similar terahertz nanoantenna array fabricated on a short-carrier-lifetime semiconductor. We demonstrate pulsed terahertz radiation with powers exceeding 4 mW over 0.1-4 THz frequency range.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.