Study of high power generation in UTC-PD at 110-210 GHz

Toshimasa Umezawa; Atsushi Kanno; Kouichi Akahane; Atsushi Matsumoto; Naokatsu Yamamoto; Tetsuya Kawanishi

doi:10.1117/12.2287589

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23 February 2018 Study of high power generation in UTC-PD at 110-210 GHz

Toshimasa Umezawa, Atsushi Kanno, Kouichi Akahane, Atsushi Matsumoto, Naokatsu Yamamoto, Tetsuya Kawanishi

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Proceedings Volume 10531, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI; 1053115 (2018) https://doi.org/10.1117/12.2287589
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

We designed and fabricated a low-bias operational uni-travelling carrier photodiode (UTC-PD) structure, which can be operated at over 100 GHz. The main structure of the device consisted of p-doped InGaAs for the photo-absorption layer and non-doped InP for the carrier collector layer, to obtain both a high electron drift velocity at a low bias and a small CR time constant based on the pn-junction capacitance. Through an on-wafer probing test, the frequency response was measured up to 210 GHz using a 1 mm coaxial connecter type (DC-110GHz), W-band (75–110 GHz) and G-band (140–220 GHz) waveguide probe with a spectrum analyzer. In the measurement results, a large bandwidth of 10 MHz-110 GHz could be obtained with good flatness within ±1 dB. When the W-band and G-band performance were characterized, the high-power characteristic of -3.8 dBm could be achieved at 106 GHz. and the output power level of - 19.8 dBm could be confirmed at 210 GHz as well.

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Toshimasa Umezawa, Atsushi Kanno, Kouichi Akahane, Atsushi Matsumoto, Naokatsu Yamamoto, and Tetsuya Kawanishi "Study of high power generation in UTC-PD at 110-210 GHz", Proc. SPIE 10531, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI, 1053115 (23 February 2018); https://doi.org/10.1117/12.2287589

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