PROCEEDINGS VOLUME 10532
SPIE OPTO | 27 JANUARY - 1 FEBRUARY 2018
Gallium Nitride Materials and Devices XIII
IN THIS VOLUME

17 Sessions, 23 Papers, 41 Presentations
Growth I  (4)
Growth II  (2)
Growth III  (3)
Lasers  (6)
New Devices  (4)
LED I  (3)
LED II  (3)
LED III  (3)
Proceedings Volume 10532 is from: Logo
SPIE OPTO
27 January - 1 February 2018
San Francisco, California, United States
Front Matter: Volume 10532
Proc. SPIE 10532, Front Matter: Volume 10532, 1053201 (14 May 2018); https://doi.org/10.1117/12.2323347
Growth I
Proc. SPIE 10532, High-temperature annealing of AlN on sapphire using face-to-face method (Conference Presentation), 1053202 (); https://doi.org/10.1117/12.2292561
Proc. SPIE 10532, Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere, 1053204 (23 February 2018); https://doi.org/10.1117/12.2292182
Proc. SPIE 10532, Crystallization of HVPE-GaN:Mn with metallic Mn as dopant source (Conference Presentation), 1053205 (); https://doi.org/10.1117/12.2289126
Proc. SPIE 10532, Crystallization of AlGaN by HVPE method (Conference Presentation), 1053206 (); https://doi.org/10.1117/12.2289135
Growth II
Proc. SPIE 10532, Recent progress in nonpolar and semi-polar GaN light emitters on patterned Si substrates, 1053208 (23 February 2018); https://doi.org/10.1117/12.2291281
Proc. SPIE 10532, Methods for point defect reduction in AlGaN (Conference Presentation), 1053209 (); https://doi.org/10.1117/12.2291937
Growth III
Proc. SPIE 10532, Polarity control in III-nitrides: new insights into an old problem (Conference Presentation), 105320C (); https://doi.org/10.1117/12.2291849
Proc. SPIE 10532, Improved crystalline quality of nonpolar a-plane GaN grown on r-plane patterned sapphire substrate (Conference Presentation), 105320E (); https://doi.org/10.1117/12.2288899
Proc. SPIE 10532, Selective area sublimation of GaN for top-down fabrication of nanostructures (Conference Presentation), 105320F (); https://doi.org/10.1117/12.2291935
New Materials
Proc. SPIE 10532, High-temperature molecular beam epitaxy of hexagonal boron nitride layers (Conference Presentation), 105320I (); https://doi.org/10.1117/12.2286495
Proc. SPIE 10532, Radiation and process-induced damage in Ga2O3 , 105320K (23 February 2018); https://doi.org/10.1117/12.2284486
Characterization I
Proc. SPIE 10532, Optical properties of doped GaN (Conference Presentation), 105320M (); https://doi.org/10.1117/12.2293824
Proc. SPIE 10532, Investigation of desorption-induced GaN quantum-dot formation using cathodoluminescence microscopy (Conference Presentation), 105320N (); https://doi.org/10.1117/12.2290737
Proc. SPIE 10532, Do we know the cause of luminescence broadening in InGaN quantum wells? (Conference Presentation), 105320O (); https://doi.org/10.1117/12.2289550
Proc. SPIE 10532, Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation), 105320P (); https://doi.org/10.1117/12.2289809
Proc. SPIE 10532, Carrier dynamics and modulation of (Al,In)GaN laser diodes (Conference Presentation), 105320Q (); https://doi.org/10.1117/12.2289793
Characterization II
Proc. SPIE 10532, Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties, 105320R (23 February 2018); https://doi.org/10.1117/12.2288211
Proc. SPIE 10532, Carrier localization induced by alloy disorder in nitride devices: theory and experiments (Conference Presentation), 105320S (); https://doi.org/10.1117/12.2291009
Proc. SPIE 10532, Leakage currents and Fermi-level shifts in C- and Fe-doped GaN (Conference Presentation), 105320T (); https://doi.org/10.1117/12.2288248
Proc. SPIE 10532, Measurement mechanism of the electrical properties of extremely high-conductivity layered p-type structures (Conference Presentation), 105320U (); https://doi.org/10.1117/12.2287340
Proc. SPIE 10532, A-plane GaN epitaxial lateral overgrowth structures: growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy (Conference Presentation), 105320V (); https://doi.org/10.1117/12.2290249
Proc. SPIE 10532, Demonstration of AlGaN-delta-GaN QW by plasma-assisted molecular beam epitaxy for 260-nm ultraviolet light emitting diodes, 105320W (23 February 2018); https://doi.org/10.1117/12.2290366
Tunnel Junction
Proc. SPIE 10532, Tunnel-injected ultraviolet light-emitting diodes (Conference Presentation), 105320Y (); https://doi.org/10.1117/12.2292553
Electron Devices
Proc. SPIE 10532, Vertical GaN-based power devices on bulk GaN substrates for future power switching systems, 1053211 (23 February 2018); https://doi.org/10.1117/12.2287297
Proc. SPIE 10532, Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications , 1053212 (23 February 2018); https://doi.org/10.1117/12.2292211
Proc. SPIE 10532, High electron mobility AlInGaN/AlN/GaN heterostructures grown on 150-mm silicon substrate (Conference Presentation), 1053213 (); https://doi.org/10.1117/12.2289377
Lasers
Proc. SPIE 10532, Carrier screening of built-in electric fields in nitride laser diodes and superluminescent diodes (Conference Presentation), 1053215 (); https://doi.org/10.1117/12.2291532
Proc. SPIE 10532, White-light sources based on GaN laser diodes: analysis and application study, 1053216 (23 February 2018); https://doi.org/10.1117/12.2290489
Proc. SPIE 10532, GaN laser diodes for high-power optical integration and quantum technologies, 1053217 (23 February 2018); https://doi.org/10.1117/12.2286044
Proc. SPIE 10532, Metalized monolithic high-contrast grating as a mirror for GaN-based VCSELs, 105321B (23 February 2018); https://doi.org/10.1117/12.2289962
Proc. SPIE 10532, Continuous-wave operation of nonpolar GaN-based vertical-cavity surface-emitting lasers, 105321C (23 February 2018); https://doi.org/10.1117/12.2314885
Nano Structure Devices
Proc. SPIE 10532, Growth and electronic properties of coaxial GaN-(Al,Ga,In)N core-shell nanowires, 105321D (23 February 2018); https://doi.org/10.1117/12.2292640
Proc. SPIE 10532, Nanoscopic insights into the structural and optical properties of a thick InGaN shell grown coaxially on GaN microrod (Conference Presentation), 105321E (); https://doi.org/10.1117/12.2288262
Proc. SPIE 10532, Emission color control for densely packed InGaN-based nanocolumns and demonstration of independent drive of multicolor (RGBY) micro-LED array (Conference Presentation), 105321F (); https://doi.org/10.1117/12.2289733
New Devices
Proc. SPIE 10532, GaN-based heterostructures for gas and bio sensing (Conference Presentation), 105321G (); https://doi.org/10.1117/12.2286327
Proc. SPIE 10532, Degradation processes and origin in InGaN-based high-power photodetectors, 105321J (23 February 2018); https://doi.org/10.1117/12.2289466
Proc. SPIE 10532, Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems, 105321N (23 February 2018); https://doi.org/10.1117/12.2315791
Quantum Efficiency
Proc. SPIE 10532, Internal quantum efficiency of nitride light emitters: a critical perspective, 105321P (23 February 2018); https://doi.org/10.1117/12.2290082
Proc. SPIE 10532, Carrier lifetimes in polar InGaN-based LEDs, 105321Q (23 February 2018); https://doi.org/10.1117/12.2286022
Proc. SPIE 10532, Determination of absolute quantum efficiency of radiation in nitride semiconductors using an integrating sphere (Conference Presentation), 105321R (); https://doi.org/10.1117/12.2285374
LED I
Proc. SPIE 10532, Flexible optoelectronics based on nitride nanostructures (Conference Presentation), 105321T (); https://doi.org/10.1117/12.2289744
Proc. SPIE 10532, Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene, 105321U (23 February 2018); https://doi.org/10.1117/12.2288233
Proc. SPIE 10532, GaN nanostructures grown on graphene for flexible light-emitting diodes (Conference Presentation), 105321V (); https://doi.org/10.1117/12.2287483
LED II
Proc. SPIE 10532, Recent progress on GaN-based superluminescent light-emitting diodes in the visible range, 105321X (23 February 2018); https://doi.org/10.1117/12.2287763
Proc. SPIE 10532, Using chessboard phosphor structure and patterned sapphire substrate technique to enhance white LED packaging efficiency (Conference Presentation), 105321Y (); https://doi.org/10.1117/12.2288290
Proc. SPIE 10532, Polar and semi-polar oriented InGaN-(In)GaN multiple quantum wells for red-light emitters (Conference Presentation), 105321Z (); https://doi.org/10.1117/12.2287399
LED III
Proc. SPIE 10532, Highly-efficient top-emitting UV A-to-C LEDs using AlN-based glass electrodes (Conference Presentation), 1053222 (); https://doi.org/10.1117/12.2285988
Proc. SPIE 10532, Unintentionally formed thin barriers of elevated Al contents in a deep-UV AlGaN quantum well for generating favored compressive strain (Conference Presentation), 1053223 (); https://doi.org/10.1117/12.2287333