Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems

Changmin Lee; Chao Shen; Clayton Cozzan; Robert M. Farrell; Shuji Nakamura; Ahmed Y. Alyamani; Boon S. Ooi; John E. Bowers; Steven P. DenBaars; James S. Speck

doi:10.1117/12.2315791

23 February 2018 Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems

Changmin Lee, Chao Shen, Clayton Cozzan, Robert M. Farrell, Shuji Nakamura, Ahmed Y. Alyamani, Boon S. Ooi, John E. Bowers, Steven P. DenBaars, James S. Speck

Author Affiliations +

Proceedings Volume 10532, Gallium Nitride Materials and Devices XIII; 105321N (2018) https://doi.org/10.1117/12.2315791
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

We report the high-speed performance of semipolar GaN ridge laser diodes at 410 nm and the dynamic characteristics including differential gain, damping, and the intrinsic maximum bandwidth. To the best of our knowledge, the achieved modulation bandwidth of 6.8 GHz is the highest reported value in the blue-violet spectrum. The calculated differential gain of ~3 x 10^-16 cm², which is a critical factor in high-speed modulation, proved theoretical predictions of higher gain in semipolar GaN laser diodes than the conventional c-plane counterparts. In addition, we demonstrate the first novel white lighting communication system by using our near-ultraviolet (NUV) LDs and pumping red-, green-, and blueemitting phosphors. This system satisfies both purposes of high-speed communication and high-quality white light illumination. A high data rate of 1.5 Gbit/s using on-off keying (OOK) modulation together with a high color rendering index (CRI) of 80 has been measured.

Conference Presentation

Citation Download Citation

Changmin Lee, Chao Shen, Clayton Cozzan, Robert M. Farrell, Shuji Nakamura, Ahmed Y. Alyamani, Boon S. Ooi, John E. Bowers, Steven P. DenBaars, and James S. Speck "Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105321N (23 February 2018); https://doi.org/10.1117/12.2315791

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