23 February 2018 Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere
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Abstract
In this study, we developed an annealing furnace for 4 inch wafers and used it to anneal AlN on a 4 inch c-plane sapphire substrate at 1700°C for 1 h in a pure N2 atmosphere by using the annealing furnace (STA1800, Taiyo Nippon Sanso). FWHM of the XRC of the (0002) of 48.6 arcsec, and that of the (10-12) of 278.2 arcsec was obtained.
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Akira Mishima, Yuji Tomita, Yoshiki Yano, Toshiya Tabuchi, Koh Matsumoto, Hideto Miyake, "Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 1053204 (23 February 2018); doi: 10.1117/12.2292182; https://doi.org/10.1117/12.2292182
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