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14 March 2018 Crystallization of AlGaN by HVPE method (Conference Presentation)
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Abstract
The main objective of this paper is crystallization of AlGaN by HVPE method. Source of Al will be metallic aluminum. Hydrochloride flow will be set above the Al source at temperature of 500ºC and as a result of reaction AlCl will form. Aluminum monochloride will be transported to the growth zone of AlGaN. The following growth parameters will be established and analyzed: i/ growth temperature, ii/ flows of gas reagents (HCl above gallium, HCl above metallic Al, ammonia), iii/ carrier gas composition (N2 or nonreactive gas). Determining proper parameters should result in a stable growth of HVPE-AlGaN layers with a desired composition of aluminum (Al content from 1 to 25%). Distribution of aluminum will be uniform in the grown layers. HVPE-AlGaN will be thick up to 100 µm. Their diameter will depend on the used seed – up to 2-inch. Structural, optical and electrical properties of HVPE-AlGaN will be examined and presented in this paper.
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Michal Bockowski, Malgorzata Iwinska, Tomasz Sochacki, Mikolaj Amilusik, Michal Fijalkowski, and Boleslaw Lucznik "Crystallization of AlGaN by HVPE method (Conference Presentation)", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 1053206 (14 March 2018); https://doi.org/10.1117/12.2289135
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