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14 March 2018 Optical properties of doped GaN (Conference Presentation)
Axel Hoffmann, Christian Nenstiel, Markus Wagner, Felix Nippert, Gordon Callsen, Nadja Jankowski, Armin Dadgar, Stacia Keller
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Proceedings Volume 10532, Gallium Nitride Materials and Devices XIII; 105320M (2018) https://doi.org/10.1117/12.2293824
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
In this paper the properties of excitons and phonons in doped GaN is reviewed. We demonstrate that in heavy Ge doped GaN new quasi particle can be stabilized. Furthermore, we discuss and use the observation of local phonon modes to clarify the incorporation of germanium, silicon, carbon, and transition metal ions on different lattice places in the nitride material.
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Axel Hoffmann, Christian Nenstiel, Markus Wagner, Felix Nippert, Gordon Callsen, Nadja Jankowski, Armin Dadgar, and Stacia Keller "Optical properties of doped GaN (Conference Presentation)", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105320M (14 March 2018); https://doi.org/10.1117/12.2293824
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KEYWORDS
Gallium nitride
Phonons
Excitons
Germanium
Optical properties
Carbon
Particles
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