CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 10532 > Article
Presentation + Paper
23 February 2018 Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties
F. C.-P. Massabuau, P. Chen, S. L. Rhode, M. K. Horton, T. J. O'Hanlon, A. Kovács, M. S. Zielinski, M. J. Kappers, R. E. Dunin-Borkowski, C. J. Humphreys, R. A. Oliver
Author Affiliations +
Proceedings Volume 10532, Gallium Nitride Materials and Devices XIII; 105320R (2018) https://doi.org/10.1117/12.2288211
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
We investigated alloy fluctuations at dislocations in III-Nitride alloys (InGaN and AlGaN). We found that in both alloys, atom segregation (In segregation in InGaN and Ga segregation in AlGaN) occurs in the tensile part of dislocations with an edge component. In InGaN, In atom segregation leads to an enhanced formation of In-N chains and atomic condensates which act as carrier localization centers. This feature results in a bright spot at the position of the dislocation in the CL images, suggesting that non-radiative recombination at dislocations is impaired. On the other hand, Ga atom segregation at dislocations in AlGaN does not seem to noticeably affect the intensity recorded by CL at the dislocation. This study sheds light on why InGaN-based devices are more resilient to dislocations than AlGaN-based devices. An interesting approach to hinder non-radiative recombination at dislocations may therefore be to dope AlGaN with In.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
F. C.-P. Massabuau, P. Chen, S. L. Rhode, M. K. Horton, T. J. O'Hanlon, A. Kovács, M. S. Zielinski, M. J. Kappers, R. E. Dunin-Borkowski, C. J. Humphreys, and R. A. Oliver "Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105320R (23 February 2018); https://doi.org/10.1117/12.2288211
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 6 PAGES + PRESENTATION
DOWNLOAD PAPER SAVE TO MY LIBRARY
WATCH
PRESENTATION
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Indium gallium nitride
Optical properties
Atomic force microscopy
Transmission electron microscopy
Microscopes
Defect inspection
Scanning electron microscopy
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top