23 February 2018 Vertical GaN-based power devices on bulk GaN substrates for future power switching systems
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We propose a normally-off vertical GaN-based transistor on a bulk GaN substrate with low specific on-state resistance of 1.0 mΩ·cm2 and high off-state breakdown voltage of 1.7 kV. P-GaN/AlGaN/GaN triple layers are epitaxially regrown over V-shaped grooves formed over the drift layer. The channel utilizes so-called semi-polar face with reduced sheet carrier concentration at the AlGaN/GaN interface, which enables high threshold voltage of 2.5 V and stable switching operations. The employed p-type gate does not give any concern of the gate instability. Note that formation of carbon doped insulating GaN layer formed on p-GaN well layer underneath the channel suppresses the punch-through current at off-state between the source and drain, which enables good off-state characteristics. The fabricated high-current vertical transistor achieves successful fast switching at 400V/15A. We also propose a novel vertical GaN-based junction barrier Schottky (JBS) diode with trenched p-GaN region on a bulk GaN substrate. A specific differential on-resistance of the GaN JBS diode is 0.9 mΩ·cm2 while keeping high breakdown voltage of 1.6 kV. These results indicate that the demonstrated vertical GaN devices are very promising for future high power switching applications.
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Daisuke Shibata, Daisuke Shibata, Ryo Kajitani, Ryo Kajitani, Hiroyuki Handa, Hiroyuki Handa, Nanako Shiozaki, Nanako Shiozaki, Shinji Ujita, Shinji Ujita, Masahiro Ogawa, Masahiro Ogawa, Kenichiro Tanaka, Kenichiro Tanaka, Satoshi Tamura, Satoshi Tamura, Tsuguyasu Hatsuda, Tsuguyasu Hatsuda, Masahiro Ishida, Masahiro Ishida, Tetsuzo Ueda, Tetsuzo Ueda, } "Vertical GaN-based power devices on bulk GaN substrates for future power switching systems", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 1053211 (23 February 2018); doi: 10.1117/12.2287297; https://doi.org/10.1117/12.2287297

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