Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications

Marko J. Tadjer; Nadeemullah A. Mahadik; Jaime A. Freitas Jr.; Evan R. Glaser; Andrew D. Koehler; Lunet E. Luna; Boris N. Feigelson; Karl D. Hobart; Fritz J. Kub; A. Kuramata

doi:10.1117/12.2292211

23 February 2018 Ga₂O₃ Schottky barrier and heterojunction diodes for power electronics applications

Marko J. Tadjer, Nadeemullah A. Mahadik, Jaime A. Freitas Jr., Evan R. Glaser, Andrew D. Koehler, Lunet E. Luna, Boris N. Feigelson, Karl D. Hobart, Fritz J. Kub, A. Kuramata

Author Affiliations +

Proceedings Volume 10532, Gallium Nitride Materials and Devices XIII; 1053212 (2018) https://doi.org/10.1117/12.2292211
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

We present novel approaches for the development of Ga₂O₃ Schottky barrier and heterojunction diodes. Samples of β- Ga₂O₃ were first annealed in N₂ and O₂ to demonstrate the effect of annealing on the carrier concentration. Cathodoluminescence and electron spin resonance measurements were also performed. Schottky barrier diodes on asgrown and O₂-annealed epitaxial Ga₂O₃ films were fabricated and breakdown voltages were compared. Lower reverse current and a breakdown voltage of about 857 V were measured on the O₂-annealed device. Finally, we report preliminary results from the development of anisotype heterojunctions between n-type Ga₂O₃ with a sputtered NiO layer. Rectifying current-voltage characteristics were obtained when the NiO was deposited both at room temperature and at 450 °C.

Citation Download Citation

Marko J. Tadjer, Nadeemullah A. Mahadik, Jaime A. Freitas Jr., Evan R. Glaser, Andrew D. Koehler, Lunet E. Luna, Boris N. Feigelson, Karl D. Hobart, Fritz J. Kub, and A. Kuramata "Ga₂O₃ Schottky barrier and heterojunction diodes for power electronics applications", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 1053212 (23 February 2018); https://doi.org/10.1117/12.2292211

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