23 February 2018 Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications
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Abstract
We present novel approaches for the development of Ga2O3 Schottky barrier and heterojunction diodes. Samples of β- Ga2O3 were first annealed in N2 and O2 to demonstrate the effect of annealing on the carrier concentration. Cathodoluminescence and electron spin resonance measurements were also performed. Schottky barrier diodes on asgrown and O2-annealed epitaxial Ga2O3 films were fabricated and breakdown voltages were compared. Lower reverse current and a breakdown voltage of about 857 V were measured on the O2-annealed device. Finally, we report preliminary results from the development of anisotype heterojunctions between n-type Ga2O3 with a sputtered NiO layer. Rectifying current-voltage characteristics were obtained when the NiO was deposited both at room temperature and at 450 °C.
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Marko J. Tadjer, Marko J. Tadjer, Nadeemullah A. Mahadik, Nadeemullah A. Mahadik, Jaime A. Freitas, Jaime A. Freitas, Evan R. Glaser, Evan R. Glaser, Andrew D. Koehler, Andrew D. Koehler, Lunet E. Luna, Lunet E. Luna, Boris N. Feigelson, Boris N. Feigelson, Karl D. Hobart, Karl D. Hobart, Fritz J. Kub, Fritz J. Kub, A. Kuramata, A. Kuramata, } "Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 1053212 (23 February 2018); doi: 10.1117/12.2292211; https://doi.org/10.1117/12.2292211
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