23 February 2018 Internal quantum efficiency of nitride light emitters: a critical perspective
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Abstract
The internal quantum efficiency (IQE) is a key property of light-emitting semiconductor structures. We critically review the most popular methods for determining the IQE. In particular, we discuss the impact of low- temperature non-radiative recombination on temperature-dependent CW photoluminescence measurements. Using temperature-dependent time-resolved photoluminescence we establish a method to verify 100 % IQE at low temperature and thus to obtain absolute internal quantum efficiencies at all temperatures.
Conference Presentation
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Andreas Hangleiter, Torsten Langer, Philipp Henning, Fedor Alexej Ketzer, Heiko Bremers, Uwe Rossow, "Internal quantum efficiency of nitride light emitters: a critical perspective", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105321P (23 February 2018); doi: 10.1117/12.2290082; https://doi.org/10.1117/12.2290082
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