23 February 2018 Internal quantum efficiency of nitride light emitters: a critical perspective
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The internal quantum efficiency (IQE) is a key property of light-emitting semiconductor structures. We critically review the most popular methods for determining the IQE. In particular, we discuss the impact of low- temperature non-radiative recombination on temperature-dependent CW photoluminescence measurements. Using temperature-dependent time-resolved photoluminescence we establish a method to verify 100 % IQE at low temperature and thus to obtain absolute internal quantum efficiencies at all temperatures.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andreas Hangleiter, Andreas Hangleiter, Torsten Langer, Torsten Langer, Philipp Henning, Philipp Henning, Fedor Alexej Ketzer, Fedor Alexej Ketzer, Heiko Bremers, Heiko Bremers, Uwe Rossow, Uwe Rossow, } "Internal quantum efficiency of nitride light emitters: a critical perspective", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105321P (23 February 2018); doi: 10.1117/12.2290082; https://doi.org/10.1117/12.2290082

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