Internal quantum efficiency of nitride light emitters: a critical perspective

Andreas Hangleiter; Torsten Langer; Philipp Farr; Fedor Alexej Ketzer; Heiko Bremers; Uwe Rossow

doi:10.1117/12.2290082

23 February 2018 Internal quantum efficiency of nitride light emitters: a critical perspective

Andreas Hangleiter, Torsten Langer, Philipp Farr, Fedor Alexej Ketzer, Heiko Bremers, Uwe Rossow

Proceedings Volume 10532, Gallium Nitride Materials and Devices XIII; 105321P (2018) https://doi.org/10.1117/12.2290082
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

The internal quantum efficiency (IQE) is a key property of light-emitting semiconductor structures. We critically review the most popular methods for determining the IQE. In particular, we discuss the impact of low- temperature non-radiative recombination on temperature-dependent CW photoluminescence measurements. Using temperature-dependent time-resolved photoluminescence we establish a method to verify 100 % IQE at low temperature and thus to obtain absolute internal quantum efficiencies at all temperatures.

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Citation Download Citation

Andreas Hangleiter, Torsten Langer, Philipp Farr, Fedor Alexej Ketzer, Heiko Bremers, and Uwe Rossow "Internal quantum efficiency of nitride light emitters: a critical perspective", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105321P (23 February 2018); https://doi.org/10.1117/12.2290082

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