In this study, a highly conductive and transparent AlN–based glass electrode, fabricated by either DC or AC-pulse-based electrical breakdown processes, is introduced, and applied to AlGaN–based UV-A and UV-C light-emitting diodes with p-AlxGa1-xN contact layers (x = 0.05, 0.1, 0.4). This AlN–based glass electrode with a conducting filament exhibited high transmittance in the deep-UV region (over 95.6 % at 280 nm) and low contact resistance with a p-Al0.4Ga0.6N layer (ρc = 3.2 × 10-2 Ω·cm2). The ohmic conduction mechanism at the interface between the AlN film and p-Al0.4Ga0.6N layers was then examined using various analytical tools. One of the 280-nm top-emitting LEDs with the AlN-based glass electrodes operated stably with a forward voltage of 7.7 V at 20 mA and a light-output power of 7.49 mW at 100 mA after packaging. The external quantum efficiency was measured to be a record-high 2.8. This report is the first demonstration of top emission from DUV LEDs, and the proposed method may be used extensively in various areas of optoelectronic devices and sensors.
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