23 February 2018 Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films
Author Affiliations +
Proceedings Volume 10533, Oxide-based Materials and Devices IX; 105330C (2018) https://doi.org/10.1117/12.2301370
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
When investigating Schottky contacts on heteroepitaxial β-Ga2O3 thin films, several non-idealities are observed in the current voltage characteristics, which cannot be accounted for with the standard diode current models. In this article, we therefore employed a model for the rigorous calculation of the diode currents in order to understand the origin of this non-idealities. Using the model and a few parameters determined from the measurements, we were able to simulate the characteristics with good agreement to the measured data for temperatures between 30 °C and 150 °C. Fitting of the simulated curves to the measured curves allows a deeper insight into the microscopic origins of said non-idealities.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel Splith, Stefan Müller, Holger von Wenckstern, Marius Grundmann, "Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105330C (23 February 2018); doi: 10.1117/12.2301370; https://doi.org/10.1117/12.2301370
PROCEEDINGS
8 PAGES


SHARE
Back to Top