23 February 2018 Bulk crystal growth of Ga2O3
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Proceedings Volume 10533, Oxide-based Materials and Devices IX; 105330E (2018) https://doi.org/10.1117/12.2301405
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
This paper describes the bulk crystal growth of β-Ga2O3 using edge-defined film-fed growth (EFG) process. We first describe the method of the crystal growth and show that large-size crystal with width of up to 6 inch can be grown. Then, we discuss the way to control electrical properties. In the discussion, we give some experimental results of residual impurity measurement, intentional doping using Si and Sn for n-type doping and Fe for insulating doping.
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Akito Kuramata, Akito Kuramata, Kimiyoshi Koshi, Kimiyoshi Koshi, Shinya Watanabe, Shinya Watanabe, Yu Yamaoka, Yu Yamaoka, Takekazu Masui, Takekazu Masui, Shigenobu Yamakoshi, Shigenobu Yamakoshi, "Bulk crystal growth of Ga2O3", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105330E (23 February 2018); doi: 10.1117/12.2301405; https://doi.org/10.1117/12.2301405
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