Latest progress in gallium-oxide electronic devices

Masataka Higashiwaki; Man Hoi Wong; Keita Konishi; Yoshiaki Nakata; Chia-Hung Lin; Takafumi Kamimura; Lingaparthi Ravikiran; Kohei Sasaki; Ken Goto; Akinori Takeyama; Takahiro Makino; Takeshi Ohshima; Akito Kuramata; Shigenobu Yamakoshi; Hisashi Murakami; Yoshinao Kumagai

doi:10.1117/12.2292666

23 February 2018 Latest progress in gallium-oxide electronic devices

Masataka Higashiwaki, Man Hoi Wong, Keita Konishi, Yoshiaki Nakata, Chia-Hung Lin, Takafumi Kamimura, Lingaparthi Ravikiran, Kohei Sasaki, Ken Goto, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Akito Kuramata, Shigenobu Yamakoshi, Hisashi Murakami, Yoshinao Kumagai

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Proceedings Volume 10533, Oxide-based Materials and Devices IX; 105330O (2018) https://doi.org/10.1117/12.2292666
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Gallium oxide (Ga₂O₃) has emerged as a new competitor to SiC and GaN in the race toward next-generation power switching and harsh environment electronics by virtue of the excellent material properties and the relative ease of mass wafer production. In this proceedings paper, an overview of our recent development progress of Ga₂O₃ metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes will be reported.

Citation Download Citation

Masataka Higashiwaki, Man Hoi Wong, Keita Konishi, Yoshiaki Nakata, Chia-Hung Lin, Takafumi Kamimura, Lingaparthi Ravikiran, Kohei Sasaki, Ken Goto, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Akito Kuramata, Shigenobu Yamakoshi, Hisashi Murakami, and Yoshinao Kumagai "Latest progress in gallium-oxide electronic devices", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105330O (23 February 2018); https://doi.org/10.1117/12.2292666

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