23 February 2018 Latest progress in gallium-oxide electronic devices
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Proceedings Volume 10533, Oxide-based Materials and Devices IX; 105330O (2018) https://doi.org/10.1117/12.2292666
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
Gallium oxide (Ga2O3) has emerged as a new competitor to SiC and GaN in the race toward next-generation power switching and harsh environment electronics by virtue of the excellent material properties and the relative ease of mass wafer production. In this proceedings paper, an overview of our recent development progress of Ga2O3 metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes will be reported.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masataka Higashiwaki, Masataka Higashiwaki, Man Hoi Wong, Man Hoi Wong, Keita Konishi, Keita Konishi, Yoshiaki Nakata, Yoshiaki Nakata, Chia-Hung Lin, Chia-Hung Lin, Takafumi Kamimura, Takafumi Kamimura, Lingaparthi Ravikiran, Lingaparthi Ravikiran, Kohei Sasaki, Kohei Sasaki, Ken Goto, Ken Goto, Akinori Takeyama, Akinori Takeyama, Takahiro Makino, Takahiro Makino, Takeshi Ohshima, Takeshi Ohshima, Akito Kuramata, Akito Kuramata, Shigenobu Yamakoshi, Shigenobu Yamakoshi, Hisashi Murakami, Hisashi Murakami, Yoshinao Kumagai, Yoshinao Kumagai, } "Latest progress in gallium-oxide electronic devices", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105330O (23 February 2018); doi: 10.1117/12.2292666; https://doi.org/10.1117/12.2292666
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