14 March 2018 A review of the growth, doping, and applications of β-Ga2O3 thin films
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Proceedings Volume 10533, Oxide-based Materials and Devices IX; 105330R (2018) https://doi.org/10.1117/12.2302471
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
β-Ga2O3 is emerging as an interesting wide band gap semiconductor for solar blind photo detectors (SBPD) and high power field effect transistors (FET) because of its outstanding material properties including an extremely wide bandgap (Eg ~4.9eV) and a high breakdown field (8 MV/cm). This review summarizes recent trends and progress in the growth/doping of β-Ga2O3 thin films and then offers an overview of the state-of-the-art in SBPD and FET devices. The present challenges for β-Ga2O3 devices to penetrate the market in real-world applications are also considered, along with paths for future work.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manijeh Razeghi, Manijeh Razeghi, Ji-Hyeon Park, Ji-Hyeon Park, Ryan McClintock, Ryan McClintock, Dimitris Pavlidis, Dimitris Pavlidis, Ferechteh H. Teherani, Ferechteh H. Teherani, David J. Rogers, David J. Rogers, Brenden A. Magill, Brenden A. Magill, Giti A. Khodaparast, Giti A. Khodaparast, Yaobin Xu, Yaobin Xu, Jinsong Wu, Jinsong Wu, Vinayak P. Dravid, Vinayak P. Dravid, } "A review of the growth, doping, and applications of β-Ga2O3 thin films", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105330R (14 March 2018); doi: 10.1117/12.2302471; https://doi.org/10.1117/12.2302471
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