23 February 2018 Vertical resistivity in nanocrystalline ZnO and amorphous InGaZnO
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Proceedings Volume 10533, Oxide-based Materials and Devices IX; 1053318 (2018) https://doi.org/10.1117/12.2290624
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
The goal is to gain additional insight into physical mechanisms and the role of microstructure on the formation of ohmic contacts and the reduction of contact resistance. We have measured a decreasing film resistivity in the vertical direction with increasing thickness of pulsed-laser deposited ZnO and IGZO. As the ZnO thickness increases from 122 nm to 441 nm, a reduction in resistivity from 3.29 Ω-cm to 0.364 Ω-cm occurred. The IGZO resistivity changes from 72.4 Ω-cm to 0.642 Ω-cm as the film is increased from 108nm to 219 nm. In the ZnO, the size of nanocolumnar grains increase with thickness resulting in fewer grain boundaries, and in the amorphous IGZO, the thicker region exhibits tunnel-like artifacts which may contribute to the reduced resistivity.
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Jonathan P. McCandless, Jonathan P. McCandless, Kevin D. Leedy, Kevin D. Leedy, Michael L. Schuette, Michael L. Schuette, } "Vertical resistivity in nanocrystalline ZnO and amorphous InGaZnO", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 1053318 (23 February 2018); doi: 10.1117/12.2290624; https://doi.org/10.1117/12.2290624
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