Paper
23 February 2018 Thermal conductivity of bulk and thin film β-Ga2O3 measured by the 3ω technique
Author Affiliations +
Proceedings Volume 10533, Oxide-based Materials and Devices IX; 105332G (2018) https://doi.org/10.1117/12.2288267
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
Thermal conductivity of undoped and Sn-doped β-Ga2O3 bulk and single-crystalline thin films have been measured by the 3ω technique. The bulk samples were grown by edge-defined film-field growth (EFG) method, while the thin films were grown on c-plane sapphire by pulsed-laser deposition (PLD). All samples were with (-201) surface orientation. Thermal conductivity of bulk samples was calculated along the in-plane and cross-plane crystallographic directions, yielding a maximum value of ~ 29 W/m-K in the [010] direction at room temperature. A slight thermal conductivity decrease was observed in the Sn-doped bulk samples, which was attributed to enhanced phonon-impurity scattering. The differential 3ω method was used for β-Ga2O3 thin film samples due to the small film thickness. Results show that both undoped and Sndoped films have a much lower thermal conductivity than that of the bulk samples, which is consistent with previous reports in the literature showing a linear relationship between thermal conductivity and film thickness. Similarly to bulk samples, Sn-doped thin films have exhibited a thermal conductivity decrease. However, this decrease was found to be much greater in thin film samples, and increased with Sn doping concentration. A correlation between thermal conductivity and defect/dislocation density was made for the undoped thin films.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Blumenschein, M. Slomski, P. P. Paskov, F. Kaess, M. H. Breckenridge, J. F. Muth, and T. Paskova "Thermal conductivity of bulk and thin film β-Ga2O3 measured by the 3ω technique", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105332G (23 February 2018); https://doi.org/10.1117/12.2288267
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Cited by 6 scholarly publications.
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KEYWORDS
Thin films

Gallium

Tin

Crystals

Transmission electron microscopy

Doping

Sapphire

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