23 February 2018 Thermal conductivity of bulk and thin film β-Ga2O3 measured by the 3ω technique
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Proceedings Volume 10533, Oxide-based Materials and Devices IX; 105332G (2018) https://doi.org/10.1117/12.2288267
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
Thermal conductivity of undoped and Sn-doped β-Ga2O3 bulk and single-crystalline thin films have been measured by the 3ω technique. The bulk samples were grown by edge-defined film-field growth (EFG) method, while the thin films were grown on c-plane sapphire by pulsed-laser deposition (PLD). All samples were with (-201) surface orientation. Thermal conductivity of bulk samples was calculated along the in-plane and cross-plane crystallographic directions, yielding a maximum value of ~ 29 W/m-K in the [010] direction at room temperature. A slight thermal conductivity decrease was observed in the Sn-doped bulk samples, which was attributed to enhanced phonon-impurity scattering. The differential 3ω method was used for β-Ga2O3 thin film samples due to the small film thickness. Results show that both undoped and Sndoped films have a much lower thermal conductivity than that of the bulk samples, which is consistent with previous reports in the literature showing a linear relationship between thermal conductivity and film thickness. Similarly to bulk samples, Sn-doped thin films have exhibited a thermal conductivity decrease. However, this decrease was found to be much greater in thin film samples, and increased with Sn doping concentration. A correlation between thermal conductivity and defect/dislocation density was made for the undoped thin films.
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N. Blumenschein, N. Blumenschein, M. Slomski, M. Slomski, P. P. Paskov, P. P. Paskov, F. Kaess, F. Kaess, M. H. Breckenridge, M. H. Breckenridge, J. F. Muth, J. F. Muth, T. Paskova, T. Paskova, } "Thermal conductivity of bulk and thin film β-Ga2O3 measured by the 3ω technique", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105332G (23 February 2018); doi: 10.1117/12.2288267; https://doi.org/10.1117/12.2288267
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