Effect of time varying phosphorus implantation on optoelectronics properties of RF sputtered ZnO thin-films

Punam Murkute; Hemant Ghadi; Shantanu Saha; Vinayak Chavan; Subhananda Chakrabarti

doi:10.1117/12.2288958

1 March 2018 Effect of time varying phosphorus implantation on optoelectronics properties of RF sputtered ZnO thin-films

Punam Murkute; Hemant Ghadi; Shantanu Saha; Vinayak Chavan; Subhananda Chakrabarti

Author Affiliations +

Proceedings Volume 10533, Oxide-based Materials and Devices IX; 105332L (2018) https://doi.org/10.1117/12.2288958
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

ZnO has potential application in the field of short wavelength devices like LED’s, laser diodes, UV detectors etc, because of its wide band gap (3.34 eV) and high exciton binding energy (60 meV). ZnO possess N-type conductivity due to presence of defects arising from oxygen and zinc interstitial vacancies. In order to achieve P-type or intrinsic carrier concentration an implantation study is preferred. In this report, we have varied phosphorous implantation time and studied its effect on optical as well structural properties of RF sputtered ZnO thin-films. Implantation was carried out using Plasma Immersion ion implantation technique for 10 and 20 s. These films were further annealed at 900°C for 10 s in oxygen ambient to activate phosphorous dopants. Low temperature photoluminescence (PL) spectra measured two distinct peaks at 3.32 and 3.199 eV for 20 s implanted sample annealed at 900°C. Temperature dependent PL measurement shows slightly blue shift in peak position from 18 K to 300 K. 3.199 eV peak can be attributed to donoracceptor pair (DAP) emission and 3.32 eV peak corresponds to conduction-band-to-acceptor (eA⁰) transition. High resolution x-ray diffraction revels dominant (002) peak from all samples. Increasing implantation time resulted in low peak intensity suggesting a formation of implantation related defects. Compression in C-axis with implantation time indicates incorporation of phosphorus in the formed film. Improvement in surface quality was observed from 20 s implanted sample which annealed at 900°C.

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Punam Murkute, Punam Murkute, Hemant Ghadi, Hemant Ghadi, Shantanu Saha, Shantanu Saha, Vinayak Chavan, Vinayak Chavan, Subhananda Chakrabarti, Subhananda Chakrabarti, } "Effect of time varying phosphorus implantation on optoelectronics properties of RF sputtered ZnO thin-films", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105332L (1 March 2018); doi: 10.1117/12.2288958; https://doi.org/10.1117/12.2288958

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