23 February 2018 Oxide hole blocking selective contacts in perovskite solar cells
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Proceedings Volume 10533, Oxide-based Materials and Devices IX; 105332R (2018) https://doi.org/10.1117/12.2294941
Event: SPIE OPTO, 2018, San Francisco, California, United States
N-type wide bandgap oxide semiconductors are important components of perovskite solar cells (PSCs)). The present paper illustrates the various important key roles of oxides in PSCs. Since the perovskite layer is prepared on the oxide(s) sublayer(s) it has a great influence the absorber properties. For high efficiency, the oxide hole blocking layer must be well-crystallized, thin and well-covering. We show that the best technique to achieve such characteristics and get high efficiency PSSC is the spray pyrolysis. Moreover, the use of a mesoporous oxide layer improves the cell efficiency but using too thick mesoporous layers is detrimental for the cell performances. TiO2 is the most popular oxide used for selective contact but SnO2 is also an alternative candidate providing good efficiencies. The oxide used must be adjusted to the absorber material properties. This is shown in the case of a silver iodobismuthate absorber (Ag2Bi3I11) which works much better when combined with a SnO2 selective contact compared to a TiO2 selective contact.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Ulfa, M. Ulfa, P. Wang, P. Wang, Z. Shao, Z. Shao, B. Viana, B. Viana, Th. Pauporté, Th. Pauporté, } "Oxide hole blocking selective contacts in perovskite solar cells", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105332R (23 February 2018); doi: 10.1117/12.2294941; https://doi.org/10.1117/12.2294941

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