Low temperature electrodeposition of silicon layers

Thierry Pauporté; Shuo Qi; Bruno Viana

doi:10.1117/12.2294944

23 February 2018 Low temperature electrodeposition of silicon layers

Thierry Pauporté, Shuo Qi , Bruno Viana

Proceedings Volume 10533, Oxide-based Materials and Devices IX; 105332S (2018) https://doi.org/10.1117/12.2294944
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

The electrodeposition of silicon at room temperature in 1-Butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide and N-Propyl-N-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide ionic liquids containing SiCl₄ salt is shown. The electrodeposition window has been determined by cyclic voltammetry. Layers have been deposited in a three electrode cell placed in an inert atmosphere and at constant applied potential. The characterizations by x-ray diffraction and Raman spectroscopy showed the formation of a layer made of amorphous silicon. The scanning electron microscopy examination revealed that the layers were featureless and well-covering.

Citation Download Citation

Thierry Pauporté, Shuo Qi , and Bruno Viana "Low temperature electrodeposition of silicon layers", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105332S (23 February 2018); https://doi.org/10.1117/12.2294944

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