23 February 2018 Low temperature electrodeposition of silicon layers
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Proceedings Volume 10533, Oxide-based Materials and Devices IX; 105332S (2018) https://doi.org/10.1117/12.2294944
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
The electrodeposition of silicon at room temperature in 1-Butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide and N-Propyl-N-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide ionic liquids containing SiCl4 salt is shown. The electrodeposition window has been determined by cyclic voltammetry. Layers have been deposited in a three electrode cell placed in an inert atmosphere and at constant applied potential. The characterizations by x-ray diffraction and Raman spectroscopy showed the formation of a layer made of amorphous silicon. The scanning electron microscopy examination revealed that the layers were featureless and well-covering.
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Thierry Pauporté, Thierry Pauporté, Shuo Qi , Shuo Qi , Bruno Viana, Bruno Viana, } "Low temperature electrodeposition of silicon layers", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105332S (23 February 2018); doi: 10.1117/12.2294944; https://doi.org/10.1117/12.2294944
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