23 February 2018 Coupling single defects in 2D semiconductor to a silver nanowire
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Proceedings Volume 10534, 2D Photonic Materials and Devices; 105340F (2018) https://doi.org/10.1117/12.2285431
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
Coupling of an atom-like emitter to surface plasmons provides a path toward significant optical nonlinearity, which is essential in quantum information processing and quantum networks. A large coupling strength requires nanometer-scale positioning accuracy of the emitter near the surface of the plasmonic structure, which is challenging. We demonstrate the coupling of single localized defects in a tungsten diselenide (WSe2) monolayer self-aligned to the surface plasmon mode of a silver nanowire. The silver nanowire induces a strain gradient on the monolayer at the overlapping area, leading to the formation of localized defect emission sites that are intrinsically close to the surface plasmon. We measured an average coupling efficiency with a lower bound of 26%±11% from the emitter into the plasmonic mode of the silver nanowire. This technique offers a way to achieve efficient coupling between plasmonic structures and localized defects of 2D semiconductors.
Conference Presentation
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Tao Cai, Subhojit Dutta, Shahriar Aghaeimeibodi, Zhili Yang, Sanghee Nah, John T. Fourkas, Edo Waks, "Coupling single defects in 2D semiconductor to a silver nanowire", Proc. SPIE 10534, 2D Photonic Materials and Devices, 105340F (23 February 2018); doi: 10.1117/12.2285431; https://doi.org/10.1117/12.2285431
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