Low temperature bonding of heterogeneous materials using Al2O3 as an intermediate layer

Hitesh Kumar Sahoo; Luisa Ottaviano; Yi Zheng; Ole Hansen; Kresten Yvind

doi:10.1117/12.2289526

23 February 2018 Low temperature bonding of heterogeneous materials using Al₂O₃ as an intermediate layer

Hitesh Kumar Sahoo, Luisa Ottaviano, Yi Zheng, Ole Hansen, Kresten Yvind

Proceedings Volume 10535, Integrated Optics: Devices, Materials, and Technologies XXII; 105350V (2018) https://doi.org/10.1117/12.2289526
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Direct wafer bonding is a key enabling technology for many current and emerging photonic devices. Most prior work on direct wafer bonding has, however, focused on the Si platform for fabrication of silicon-on-insulator (SOI) and micro-electromechanical systems (MEMS). As a result, a universal bonding solution for heterogeneous material systems has not yet been developed. This has been a roadblock in the realization of novel devices which need the integration of new semiconductor platforms such as III-V on Si, Ge on Sapphire, LiNbO₃ on GaAs etc. The large thermal expansion coefficient mismatch in the hetero-material systems limits the annealing to low temperatures to avoid stressed films. This work explores the use of Al₂O₃ as an intermediate layer for bonding heterogeneous materials. The key to achieve a stronger bond is to maximize the hydroxyl group density of the bonding interfaces. The use of Al₂O₃ helps achieve that, since it has a high hydroxyl group density (around 18 OH/nm² at RT) which is approximately 4 times that of a Si surface. This work optimizes the bonding process using Al₂O₃ by studying the contribution of Al₂O₃ deposition parameters. An optimized process is presented and applied to bond GaAs on Sapphire and InP on SiO₂/Si.

Conference Presentation

Citation Download Citation

Hitesh Kumar Sahoo, Luisa Ottaviano, Yi Zheng, Ole Hansen, and Kresten Yvind "Low temperature bonding of heterogeneous materials using Al₂O₃ as an intermediate layer", Proc. SPIE 10535, Integrated Optics: Devices, Materials, and Technologies XXII, 105350V (23 February 2018); https://doi.org/10.1117/12.2289526

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available