23 February 2018 Group IV mid-infrared devices and circuits
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In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelength region and we report several active and passive devices realised in these materials. We particularly focus on devices and circuits for wavelengths longer than 7 micrometers.
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G. Z. Mashanovich, G. Z. Mashanovich, J. Soler Penadés, J. Soler Penadés, W. Cao, W. Cao, Z. Qu, Z. Qu, A. Osman, A. Osman, Y. Wu, Y. Wu, A. Z. Khokhar, A. Z. Khokhar, C. J. Littlejohns, C. J. Littlejohns, S. Stankovic, S. Stankovic, S. Reynolds, S. Reynolds, V. Mittal, V. Mittal, G. S. Murugan, G. S. Murugan, J. S. Wilkinson, J. S. Wilkinson, Y. Qi, Y. Qi, F. Y. Gardes, F. Y. Gardes, D. J. Thomson, D. J. Thomson, M. Nedeljkovic, M. Nedeljkovic, } "Group IV mid-infrared devices and circuits", Proc. SPIE 10535, Integrated Optics: Devices, Materials, and Technologies XXII, 1053512 (23 February 2018); doi: 10.1117/12.2289531; https://doi.org/10.1117/12.2289531


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