Advanced modulation format using silicon modulators in the O-band

D. Pérez Galacho; L. Bramerie; C. Baudot; M. Chaibi; S. Messaoudène; N. Vulliet; L. Vivien; C. Peucheret; D. Marris-Morini

doi:10.1117/12.2291888

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23 February 2018 Advanced modulation format using silicon modulators in the O-band

D. Pérez Galacho, L. Bramerie, C. Baudot, M. Chaibi, S. Messaoudène, N. Vulliet, L. Vivien, C. Peucheret, D. Marris-Morini

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Proceedings Volume 10535, Integrated Optics: Devices, Materials, and Technologies XXII; 105351K (2018) https://doi.org/10.1117/12.2291888
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

This paper review our recent work on silicon modulators based on free carrier concentration, working in the O-band of optical communications (1260 nm - 1360 nm) for short distance applications. 25 Gbit/s OOK modulation is obtained using a driving voltage of 3.3 V_pp , and QPSK dual-drive Mach-Zehnder modulator (DDMZM) operating in the O-band is demonstrated for the first time.

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D. Pérez Galacho, L. Bramerie, C. Baudot, M. Chaibi, S. Messaoudène, N. Vulliet, L. Vivien, C. Peucheret, and D. Marris-Morini "Advanced modulation format using silicon modulators in the O-band", Proc. SPIE 10535, Integrated Optics: Devices, Materials, and Technologies XXII, 105351K (23 February 2018); https://doi.org/10.1117/12.2291888

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