23 February 2018 Advanced modulation format using silicon modulators in the O-band
Author Affiliations +
This paper review our recent work on silicon modulators based on free carrier concentration, working in the O-band of optical communications (1260 nm - 1360 nm) for short distance applications. 25 Gbit/s OOK modulation is obtained using a driving voltage of 3.3 Vpp , and QPSK dual-drive Mach-Zehnder modulator (DDMZM) operating in the O-band is demonstrated for the first time.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Pérez Galacho, D. Pérez Galacho, L. Bramerie, L. Bramerie, C. Baudot, C. Baudot, M. Chaibi, M. Chaibi, S. Messaoudène, S. Messaoudène, N. Vulliet, N. Vulliet, L. Vivien, L. Vivien, C. Peucheret, C. Peucheret, D. Marris-Morini, D. Marris-Morini, "Advanced modulation format using silicon modulators in the O-band", Proc. SPIE 10535, Integrated Optics: Devices, Materials, and Technologies XXII, 105351K (23 February 2018); doi: 10.1117/12.2291888; https://doi.org/10.1117/12.2291888


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