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22 February 2018 Electrically pumped VCSELs using type-II quantum wells for the mid-infrared
G. K. Veerabathran, S. Sprengel, A. Andrejew, M.-C. Amann
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Proceedings Volume 10536, Smart Photonic and Optoelectronic Integrated Circuits XX; 1053602 (2018) https://doi.org/10.1117/12.2286325
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
We demonstrate the extension of the wavelength range of InP- and GaSb-based buried tunnel junction VCSELs using type-II quantum wells. The InP-based devices emit at 2.5 μm and operate in continuous-wave (CW) up to 20°C, with a maximum single-mode output power above 500 μW. They exhibit a continuous electro-thermal tuning range of 5.2 nm. The GaSb-based devices emit up to 4 μm and operate in CW and pulsed mode until -7°C and 45°C, respectively. The maximum single-mode CW output power is 175 μW. A mode-hop free electro-thermal tuning of ~19 nm is achieved. These VCSELs are highly promising for gas sensing applications.
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G. K. Veerabathran, S. Sprengel, A. Andrejew, and M.-C. Amann "Electrically pumped VCSELs using type-II quantum wells for the mid-infrared", Proc. SPIE 10536, Smart Photonic and Optoelectronic Integrated Circuits XX, 1053602 (22 February 2018); https://doi.org/10.1117/12.2286325
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KEYWORDS
Quantum wells
Vertical cavity surface emitting lasers
Continuous wave operation
Gallium antimonide
Mid-IR
Pulsed laser operation
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