22 February 2018 A self-aligned dry etching method for mechanical strain enhancement of germanium and its uniformity improvement for photonic applications
Author Affiliations +
Proceedings Volume 10537, Silicon Photonics XIII; 1053704 (2018) https://doi.org/10.1117/12.2288154
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
A self-aligned dry etching method was proposed and verified theoretically to enhance the magnitude and simultaneously improve the uniformity of the tensile strain in a germanium (Ge) wave-guide (WG), with the help of tensile-stressed SiN stressor at the WG sidewalls. The SiN-strained germanium-on-insulator (GOI) WG was also experimentally demonstrated. Significant tensile strain was observed in the Ge material via micro-Raman measurements. This method could potentially facilitate a Ge photodetector with its optical detection range extended further towards longer wavelength and to be comparable with that of state-of-the-art InGaAs detectors.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yiding Lin, Yiding Lin, Danhao Ma, Danhao Ma, Kwang Hong Lee, Kwang Hong Lee, Jurgen Michel, Jurgen Michel, Chuan Seng Tan, Chuan Seng Tan, } "A self-aligned dry etching method for mechanical strain enhancement of germanium and its uniformity improvement for photonic applications", Proc. SPIE 10537, Silicon Photonics XIII, 1053704 (22 February 2018); doi: 10.1117/12.2288154; https://doi.org/10.1117/12.2288154
PROCEEDINGS
7 PAGES + PRESENTATION

SHARE
RELATED CONTENT


Back to Top