22 February 2018 A hybrid SOI/SiN photonic platform for high-speed and temperature-insensitive CWDM optical transceivers
Author Affiliations +
Proceedings Volume 10537, Silicon Photonics XIII; 1053709 (2018) https://doi.org/10.1117/12.2289633
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
We introduce our 200 mm Si-SiN photonics platform for high-speed and energy-efficient optical transceiver. We present the fabrication process as well as wafer level characterizations in the O-band of Si and SiN photonic components such as waveguides, grating fiber couplers and Si-SiN interlayer adiabatic transitions. We demonstrate a low thermo-optic coefficient of the SiN layer and a large optical bandwidth for the hybrid Si-SiN photonic devices. This enhanced Si-SiN platform is of great importance for the realization of CWDM transceivers for which low temperature sensitivity and large bandwidth are needed.
Conference Presentation
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Q. Wilmart, D. Fowler, C. Sciancalepore, K. Hassan, S. Plantier, L. Adelmini, S. Garcia, D. Robin-Brosse, S. Malhouitre, S. Olivier, "A hybrid SOI/SiN photonic platform for high-speed and temperature-insensitive CWDM optical transceivers", Proc. SPIE 10537, Silicon Photonics XIII, 1053709 (22 February 2018); doi: 10.1117/12.2289633; https://doi.org/10.1117/12.2289633
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