22 February 2018 A hybrid SOI/SiN photonic platform for high-speed and temperature-insensitive CWDM optical transceivers
Author Affiliations +
Proceedings Volume 10537, Silicon Photonics XIII; 1053709 (2018) https://doi.org/10.1117/12.2289633
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
We introduce our 200 mm Si-SiN photonics platform for high-speed and energy-efficient optical transceiver. We present the fabrication process as well as wafer level characterizations in the O-band of Si and SiN photonic components such as waveguides, grating fiber couplers and Si-SiN interlayer adiabatic transitions. We demonstrate a low thermo-optic coefficient of the SiN layer and a large optical bandwidth for the hybrid Si-SiN photonic devices. This enhanced Si-SiN platform is of great importance for the realization of CWDM transceivers for which low temperature sensitivity and large bandwidth are needed.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Q. Wilmart, Q. Wilmart, D. Fowler, D. Fowler, C. Sciancalepore, C. Sciancalepore, K. Hassan, K. Hassan, S. Plantier, S. Plantier, L. Adelmini, L. Adelmini, S. Garcia, S. Garcia, D. Robin-Brosse, D. Robin-Brosse, S. Malhouitre, S. Malhouitre, S. Olivier, S. Olivier, } "A hybrid SOI/SiN photonic platform for high-speed and temperature-insensitive CWDM optical transceivers", Proc. SPIE 10537, Silicon Photonics XIII, 1053709 (22 February 2018); doi: 10.1117/12.2289633; https://doi.org/10.1117/12.2289633
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