22 February 2018 Strain analysis of SiGe microbridges
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Proceedings Volume 10537, Silicon Photonics XIII; 105371E (2018) https://doi.org/10.1117/12.2288644
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
We present the analysis of UV (325 nm) Raman scattering spectra from silicon-germanium (SiGe) microbridges where the SiGe has been formed using the so-called "condensation technique". As opposed to the conventional condensation technique in which SiGe is grown epitaxially, we use high-dose ion implantation of Ge ions into SOI as a means to introduce the initial Ge profile. The subsequent oxidation both repairs implantation induced damage, and forms epitaxial Ge. Using Si-Si and Si-Ge optical phonon modes, as well as the ratio of integrated intensities for Ge-Ge and Si-Si, we can determine both the composition and strain of the material. We show that although the material is compressively strained following condensation, by fabricating microbridge structures we can create strain relaxed or tensile strained structures, with subsequent interest for photonic applications.
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Ross Anthony, Ross Anthony, Ashley Gilbank, Ashley Gilbank, Iain Crowe, Iain Crowe, Andrew Knights, Andrew Knights, } "Strain analysis of SiGe microbridges", Proc. SPIE 10537, Silicon Photonics XIII, 105371E (22 February 2018); doi: 10.1117/12.2288644; https://doi.org/10.1117/12.2288644
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