Optimized optical devices for edge-coupling-enabled silicon photonics platform

Ching Eng Png; Thomas Y. L. Ang; Jun Rong Ong; Soon Thor Lim; Ezgi Sahin; G. F. R. Chen; D. T. H. Tan; Tina X. Guo; Hong Wang

doi:10.1117/12.2290313

22 February 2018 Optimized optical devices for edge-coupling-enabled silicon photonics platform

Ching Eng Png, Thomas Y. L. Ang, Jun Rong Ong, Soon Thor Lim, Ezgi Sahin, G. F. R. Chen, D. T. H. Tan, Tina X. Guo, Hong Wang

Author Affiliations +

Proceedings Volume 10537, Silicon Photonics XIII; 105371L (2018) https://doi.org/10.1117/12.2290313
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

We present a library of high-performance passive and active silicon photonic devices at the C-band that is specifically designed and optimized for edge-coupling-enabled silicon photonics platform. These devices meet the broadband (100 nm), low-loss (< 2dB per device), high speed (≥ 25 Gb/s), and polarization diversity requirements (TE and TM polarization extinction ratio ≤ 25 dB) for optical communication applications. Ultra-low loss edge couplers, broadband directional couplers, high-extinction ratio polarization beam splitters (PBSs), and high-speed modulators are some of the devices within our library. In particular, we have designed and fabricated inverse taper fiber-to-waveguide edge couplers of tip widths ranging from 120 nm to 200 nm, and we obtained a low coupling loss of 1.80±0.28 dB for 160 nm tip width. To achieve polarization diversity operation for inverse tapers, we have experimentally realized different designs of polarization beam splitters (PBS). Our optimized PBS has a measured extinction ratio of ≤ 25 dB for both the quasiTE modes, and quasi-TM modes. Additionally, a broadband (100 nm) directional coupler with a 50/50 power splitting ratio was experimentally realized on a small footprint of 20×3 μm² . Last but not least, high-speed silicon modulators with a range of carrier doping concentrations and offset of the PN junction can be used to optimise the modulation efficiency, and insertion losses for operation at 25 GHz.

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Ching Eng Png, Thomas Y. L. Ang, Jun Rong Ong, Soon Thor Lim, Ezgi Sahin, G. F. R. Chen, D. T. H. Tan, Tina X. Guo, and Hong Wang "Optimized optical devices for edge-coupling-enabled silicon photonics platform", Proc. SPIE 10537, Silicon Photonics XIII, 105371L (22 February 2018); https://doi.org/10.1117/12.2290313

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