2D materials integrated in Si3N4 photonics platform

Joaquin Faneca; Benjamin T. Hogan; E. Torres Alonso; Monica Craciun; Anna Baldycheva

doi:10.1117/12.2290410

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22 February 2018 2D materials integrated in Si₃N₄ photonics platform

Joaquin Faneca, Benjamin T. Hogan, E. Torres Alonso, Monica Craciun, Anna Baldycheva

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Proceedings Volume 10537, Silicon Photonics XIII; 105370A (2018) https://doi.org/10.1117/12.2290410
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

In this paper, we discuss a back-end CMOS fabrication process for the large-scale integration of 2D materials on SOI (siliconon-insulator) platform and present a complete theoretical study of the change in the effective refractive index of 2D materialsenabled silicon nitride waveguide structures. The chemical vapour deposition (CVD) and liquid exfoliation fabrication methods are described for the fabrication of graphene, WS₂ and MoS₂ thin films. Finite-difference frequency-domain (FDFD) approach and the Transfer Matrix Method were used in order to mathematically describe these structures. The introduction of thin films of 2D material onto Si₃N₄ waveguide structures allows manipulation of the optical characteristics to a high degree of precision by varying the Fermi-level through the engineering of the number of atomically thin layers or by electrical tuning, for example. Based on the proposed tuning approach, designs of graphene, WS₂ and MoS₂ enabled Si₃N₄ micro-ring structures are presented for the visible and NIR range, which demonstrate versatility and desirable properties for a wide range of applications, such as bio-chemical sensing and optical communications.

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Joaquin Faneca, Benjamin T. Hogan, E. Torres Alonso, Monica Craciun, and Anna Baldycheva "2D materials integrated in Si₃N₄ photonics platform", Proc. SPIE 10537, Silicon Photonics XIII, 105370A (22 February 2018); https://doi.org/10.1117/12.2290410

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