All silicon approach to modulation and detection at λ = 2 µm

Callum G. Littlejohns; Milos Nedeljkovic; Wei Cao; Jordi Soler Penades; David Hagan; Jason J. Ackert; Mohamed Saïd Rouifed; Wanjun Wang; Zecen Zhang; Haodong Qiu; Tina Guo Xin; Andrew P. Knights; Graham T. Reed; Goran Z. Mashanovich; Hong Wang; David J. Thomson

doi:10.1117/12.2288951

22 February 2018 All silicon approach to modulation and detection at λ = 2 μm

Callum G. Littlejohns, Milos Nedeljkovic, Wei Cao, Jordi Soler Penades, David Hagan, Jason J. Ackert, Mohamed Saïd Rouifed, Wanjun Wang, Zecen Zhang, Haodong Qiu, Tina Guo Xin, Andrew P. Knights, Graham T. Reed, Goran Z. Mashanovich, Hong Wang, David J. Thomson

Author Affiliations +

Proceedings Volume 10538, Optical Interconnects XVIII; 105380Y (2018) https://doi.org/10.1117/12.2288951
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Silicon photonics has traditionally focused on near infrared wavelengths, with tremendous progress seen over the past decade. However, more recently, research has extended into mid infrared wavelengths of 2 μm and beyond. Optical modulators are a key component for silicon photonics interconnects at both the conventional communication wavelengths of 1.3 μm and 1.55 μm, and the emerging mid-infrared wavelengths. The mid-infrared wavelength range is particularly interesting for a number of applications, including sensing, healthcare and communications. The absorption band of conventional germanium photodetectors only extends to approximately 1.55 μm, so alternative methods of photodetection are required for the mid-infrared wavelengths. One possible CMOS compatible solution is a silicon defect detector. Here, we present our recent results in these areas. Modulation at the wavelength of 2 μm has been theoretically investigated, and photodetection above 25 Gb/s has been practically demonstrated.

Citation Download Citation

Callum G. Littlejohns, Callum G. Littlejohns, Milos Nedeljkovic, Milos Nedeljkovic, Wei Cao, Wei Cao, Jordi Soler Penades, Jordi Soler Penades, David Hagan, David Hagan, Jason J. Ackert, Jason J. Ackert, Mohamed Saïd Rouifed, Mohamed Saïd Rouifed, Wanjun Wang, Wanjun Wang, Zecen Zhang, Zecen Zhang, Haodong Qiu, Haodong Qiu, Tina Guo Xin, Tina Guo Xin, Andrew P. Knights, Andrew P. Knights, Graham T. Reed, Graham T. Reed, Goran Z. Mashanovich, Goran Z. Mashanovich, Hong Wang, Hong Wang, David J. Thomson, David J. Thomson, } "All silicon approach to modulation and detection at λ = 2 μm", Proc. SPIE 10538, Optical Interconnects XVIII, 105380Y (22 February 2018); doi: 10.1117/12.2288951; https://doi.org/10.1117/12.2288951

ACCESS THE FULL ARTICLE

PERSONAL SIGN IN
Full access may be available with your subscription

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account
or Institutional Sign In via Shibboleth

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $14.40

Non-members: $18.00 ADD TO CART

Show All Keywords

Keywords/Phrases

Search In:

Publication Years