Translator Disclaimer
Paper
22 February 2018 All silicon approach to modulation and detection at λ = 2 μm
Author Affiliations +
Proceedings Volume 10538, Optical Interconnects XVIII; 105380Y (2018) https://doi.org/10.1117/12.2288951
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
Silicon photonics has traditionally focused on near infrared wavelengths, with tremendous progress seen over the past decade. However, more recently, research has extended into mid infrared wavelengths of 2 μm and beyond. Optical modulators are a key component for silicon photonics interconnects at both the conventional communication wavelengths of 1.3 μm and 1.55 μm, and the emerging mid-infrared wavelengths. The mid-infrared wavelength range is particularly interesting for a number of applications, including sensing, healthcare and communications. The absorption band of conventional germanium photodetectors only extends to approximately 1.55 μm, so alternative methods of photodetection are required for the mid-infrared wavelengths. One possible CMOS compatible solution is a silicon defect detector. Here, we present our recent results in these areas. Modulation at the wavelength of 2 μm has been theoretically investigated, and photodetection above 25 Gb/s has been practically demonstrated.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Silicon photonics: the early years
Proceedings of SPIE (March 07 2005)
Recent advances in high speed silicon optical modulator
Proceedings of SPIE (February 09 2007)
Group IV photonic devices for the mid-infrared
Proceedings of SPIE (May 10 2012)
Study of silicon photonics based on standard CMOS foundry
Proceedings of SPIE (November 16 2010)

Back to Top