26 January 2018 Microcavity III-V lasers monolithically grown on silicon
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Abstract
We will present our recent work on III-V micro-cavity lasers monolithically grown on silicon substrates. The III-V material is directly grown using Template-Assisted-Selective-Epitaxy (TASE) within oxide cavities patterned using conventional lithographic techniques on top of the silicon substrate. This allows for the local integration of single-crystal III-V active gain material. Two variations of this technique will be discussed; the direct growth of disc lasers and the two-step approach via a virtual substrate. Room temperature single-mode optically pumped lasing is achieved in GaAs micro-cavity lasers, and devices show a remarkably low shift of the lasing threshold (T0=170K) with temperature. Dependence on cavity geometry and pump power will be discussed.
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B. Mayer, S. Mauthe, Y. Baumgartner, S. Wirths, J. Winniger, P. Staudinger, H. Schmid, M. Souza, L. Czornomaz, K. E. Moselund, "Microcavity III-V lasers monolithically grown on silicon ", Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV, 105401D (26 January 2018); doi: 10.1117/12.2291735; https://doi.org/10.1117/12.2291735
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